Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Submitted by tugrul on
The research article “Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode”, co-authored by METU member Prof. Mehmet Parlak, has been published in Journal of Materials Science: Materials in Electronics.