Last Updated:

21/08/2020 - 14:32

The research article “Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode”, co-authored by METU member Prof. Mehmet Parlak, has been published in Journal of Materials Science: Materials in Electronics.

This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current−voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 × 10− 9 A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calculated from the forward bias current−voltage curve at room temperature under dark conditions as 0.79 eV and 4.22 eV, respectively. In order to get detailed information about density of interface states and series resistance of this structure, capacitance-voltage and conductance-voltage measurements in the frequency range of 10−1000 kHz were performed. As a result, a decreasing capacitance profile with increasing frequency was obtained. In addition, peak-like behavior in the capacitance profiles was observed and these were found to be the indication of density of states. Further analysis was performed on the evaluation of density of interface states values and these values were calculated by using two different methods: Hill-Coleman and high-low frequency capacitance. These profiles were also analyzed by eliminating the effect of series resistance values on the measured capacitance and conductance; then the values of corrected capacitance and conductance as a function of applied voltage were discussed. Based on these analyses on the capacitive characteristics of the diode, dielectric constant, dielectric loss, loss tangent, electrical conductivity, and the real and imaginary part of electric modulus were investigated for complete understanding on the diode characteristics.


Gullu, H. H., Yildiz, D. E., Surucu, O., & Parlak, M. (2020). Frequency effect on electrical and dielectric characteristics of HfO2-interlayered si-based schottky barrier diode. Journal of Materials Science: Materials in Electronics, 31(12), 9394-9407. doi:10.1007/s10854-020-03479-4

 

Article access: https://link.springer.com/article/10.1007/s10854-020-03479-4


METU Author

Prof. Mehmet Parlak

parlak@metu.edu.tr Scopus Author ID: 7003589218
About the author ORCID: 0000-0001-9542-5121

Other authors:
Gullu, H. H., Yildiz, D. E., & Surucu, O.


Acknowledgment:
This work was financed by Hitit University (Corum, Turkey) under the Grant No. FEF19004.15.010, FEF19002.15.001 and FEF01.13.003.