Thermoluminescence characteristics of Bi12SiO20 single crystals

Üniversitemiz öğretim üyelerinden Prof. Dr. Nizami Hasanlı’nın yazarları arasında bulunduğu “Thermoluminescence characteristics of Bi₁₂SiO₂₀ single crystals” başlıklı makale Journal of Luminescence’ta yayınlandı.

 Trapping center properties of bismuth silicon oxide (Bi₁₂SiO₂₀) single crystals were investigated by thermoluminescence (TL) measurements performed in the 50–400 °C temperature range. Experimental TL curve recorded at heating rate of 1 °C/s presented two overlapped peaks around 279 and 362 °C. The heating rate dependency of TL curve was also studied for heating rates between 1 and 6 ^°C/s. The measured TL curves were analyzed using curve fitting, initial rise and different heating rate methods. The results of analyses indicated that TL glow curve is composed by two peaks associated with two discrete trapping centers at 0.81 and 1.10 eV. The revealed trapping centers were associated with intrinsic defects in the Bi₁₂SiO₂₀ compound under the light of previously reported papers. An energy band diagram was also plotted to indicate possible transitions within the forbidden band gap.

Isik, M., Sarigul, N., & Gasanly, N. M. (2020). Thermoluminescence characteristics of Bi12SiO20 single crystals. Journal of Luminescence, 224 doi:10.1016/j.jlumin.2020.117280

Makaleye erişim için: https://www.sciencedirect.com/science/article/abs/pii/S0022231320303690?via%3Dihub

Anahtar sözcükler:

Bi₁₂SiO₂₀ (BSO); Sillenites; Thermoluminescence; Trap/defect properties

Diğer Yazarlar:
Isik M., & Sarigul N.

Ek Bilgiler:
This work was supported by ATILIM University under Grant No: ATÜ-ADP-1920-03 .