The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films

Üniversitemiz öğretim üyelerinden Prof. Dr. Nizami Hasanlı’nın yazarları arasında bulunduğu “The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films” başlıklı makale Optics and Laser Technology’de yayınlandı.

The amorphous semiconductor TlGa_xIn_(1-x)S₂ (0 ≤ x ≤ 1) chalcogenide thin films were prepared with 70 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties of the films were studied by Z-scan technique. The energy band gap values were calculated by using linear absorption spectra. The effect of Ga/In ratio leads to increase 0.22 eV in band gap energy. To derive the transmission in open aperture Z-scan data, a theoretical model incorporating two photon and free carrier absorptions and their saturations were considered and effective nonlinear absorption coefficients and saturation intensity thresholds extracted from the fitting of the experimental results. Highest effective nonlinear absorption coefficient was found for TlInS₂ sample due to having the smallest energy bandgap. In an attempt to investigate the effect of localized defect states on the nonlinear absorption, TlGaS₂ thin films were annealed up to 473 K. It was found that increasing annealing temperature leads to reduction of the localized defect states. Nonlinear absorption coefficient and saturation intensity threshold decrease with reduction of the localized defect states.

Ünlü, B. A., Karatay, A., Yüksek, M., Ünver, H., Gasanly, N., & Elmali, A. (2020). The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films. Optics and Laser Technology, 128 doi:10.1016/j.optlastec.2020.106230

Makaleye erişim için: https://www.sciencedirect.com/science/article/abs/pii/S0030399219318584?via%3Dihub

Anahtar sözcükler:

Amorphous semiconductors; Localized defect states; Nonlinear absorption; Thin films; TlGaxIn(1-x)S2; Z-scan

Diğer Yazarlar:

Ünlü, B. A., Karatay, A., Yüksek, M., Ünver, H., & Elmali, A.